Foundation stone laid for semiconductor unit in Odisha, Pg8

Key Highlights:

• Foundation stone laid for a silicon carbide semiconductor plant in Odisha under the India Semiconductor Mission.
• The project involves an investment of ₹2,067 crore.
• SiCSem Private Limited, a subsidiary of Archean Chemical Industries Limited, will establish the facility.
• The plant is expected to be operational by 2027-28.
• The facility will process 60,000 SiC wafers annually and package approximately 96 million units.
• The project is expected to create over 1,000 direct jobs.

Detailed Insights:

• The India Semiconductor Mission aims to develop a comprehensive and sustainable semiconductor and display ecosystem within the country.
• Silicon carbide (SiC) wafers are used in the production of power devices and high-temperature, high-frequency electronics.
• The establishment of this plant will reduce India's reliance on imports for semiconductors, bolstering the domestic electronics manufacturing sector.
• The integrated facility will contribute to the growth of the semiconductor industry in Odisha and create employment opportunities for skilled workers.

Scientific/Technical Concepts Involved:

• Semiconductor: A material with electrical conductivity between a conductor and an insulator.
• Silicon Carbide (SiC): A compound of silicon and carbon used in high-power and high-temperature semiconductors.
• Wafer: A thin slice of semiconductor material used for the fabrication of integrated circuits.